Record-High Electron Mobility and Controlled Low 10${}^{15}$ cm${}^{-3}$ Si-doping in (010) $\beta$-Ga${}_2$O${}_3$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $\mu$m thick $\beta$-Ga${}_2$O${}_3$ films with electron concentrations in the 10${}^{15}$ cm$^{…