27 citations · 27 across the 4 of their papers we have counts for
5 papers
Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
D. Gogova, D. Tran, V. Stanishev +11
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
Danial Shafizade, Joel Davidsson, Takeshi Ohshima +2
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divac…
Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H- and 6H-SiC
Danial Shafizadeh, Joel Davidsson, Takeshi Ohshima +3
In this study, we address the selection rules with respect to the polarization of the optical excitation of two colour centres in 4H-SiC and 6H-SiC with potential for applications…
Exhaustive characterization of modified Si vacancies in 4H-SiC
Joel Davidsson, Rohit Babar, Danial Shafizadeh +4
The negatively charged silicon vacancy () in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of en…