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cond-mat.mtrl-sci2026
Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
D. Gogova, D. Tran, V. Stanishev +11
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…
quant-ph2026
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
Danial Shafizadeh, Misagh Ghezellou, Viktor M. Bobal +5
A photoluminescence (PL) and magnetic resonance investigation of a defect in chlorine-implanted 4H-SiC is presented. This Cl-related center emits light at telecom wavelengths with…