27 citations · 27 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2026
Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
D. Gogova, D. Tran, V. Stanishev +11
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitri…
cond-mat.mtrl-sci2022★ 27 cited
Exhaustive characterization of modified Si vacancies in 4H-SiC
Joel Davidsson, Rohit Babar, Danial Shafizadeh +4
The negatively charged silicon vacancy () in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of en…