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Zexiang Shen

23 papers hereh-index 10039.2k citations494 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author11
  • last author9

Across the 20 of 23 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci15
  • cond-mat.mes-hall3
  • physics.optics3
  • cond-mat.other1
  • physics.chem-ph1
same name
  • Zexiang Shen — 2 papers, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20082016
most citedRaman spectroscopy of epitaxial graphene on a SiC substrate

551 citations · 2.8k across the 23 of their papers we have counts for

collaborators
Showing 2011Show all

4 papers · 1 filter

physics.optics2011

Plasmonic orbital angular momentum manipulation through light control

X. -C. Yuan, Z. J. Hu, G. H. Yuan +1

Plasmonic vortices (PV) excited by a highly focused radially polarized optical vortex (RPOV) beam on a metal surface are investigated experimentally and theoretically. The proposed…

cond-mat.other2011

Hydrogen bond relaxation dynamics and the associated vibronic and volumetric anomalies of H2O upon frozen

Xi Zhang, Xiaojian Fu, Yu Wen +4

A combination of the extended Ice Rule of Pauling, Raman spectroscopy, and molecular dynamics calculations has enabled us to clarify the bonding origin of the anomalous volume expa…

cond-mat.mtrl-sci2011★ 116 cited

Interaction between graphene and SiO2 surface

X. F. Fan, W. T. Zheng, Z. X. Shen +1

With first-principles DFT calculations, the interaction between graphene and SiO2 surface has been analyzed by constructing the different configurations based on α-quartz and crist…

cond-mat.mtrl-sci2011★ 460 cited

Surface energy engineering of graphene

Young Jun Shin, Yingying Wang, Han Huang +5

Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69…

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