Qiuhui Li

most citedQuantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

4 citations · 4 across the 6 of their papers we have counts for

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physics.app-ph2023

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications

Linqiang Xu, Lianqiang Xu, Jun Lan +7

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…

Sub-5-nm Ultra-thin In2​O3​ Transistors for High-Performance and Low-Power Electronic Applications

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications