Qiuhui Li

most citedQuantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

4 citations · 4 across the 3 of their papers we have counts for

collaborators

3 papers

physics.comp-ph2024★ 4 cited

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Ying Li, Yang Shen, Linqiang Xu +7

Sub-1-nm gate length $M o S_{2}$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the s…

physics.app-ph2023

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications

Linqiang Xu, Lianqiang Xu, Jun Lan +7

Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…

cond-mat.mtrl-sci2023

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Linqiang Xu, Lianqiang Xu, Qiuhui Li +7

Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Sub-5-nm Ultra-thin In2​O3​ Transistors for High-Performance and Low-Power Electronic Applications

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Sub-5-nm Ultra-thin In $_{2}$ O $_{3}$ Transistors for High-Performance and Low-Power Electronic Applications