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Theory of extrinsic contributions to the full orbital current
James H Cullen, Dimitrie Culcer
The orbital Hall effect (OHE) underpins the emerging field of orbitronics. A complete quantum-mechanical evaluation of the usual orbital-current operator must retain all matrix ele…
Orbital-geometric spin response: inter-band coherence versus orbital-to-spin conversion
Dimitrie Culcer
Orbitronics seeks to convert orbital angular momentum (OAM) into spin, but its microscopic dynamics is not understood. Here I show that, at moderate spin-orbit coupling, an electri…
Inter-band coherence effects in disordered crystals: beyond the non-crossing approximation
Zhanning Wang, James H. Cullen, Roberto Raimondi +1
We develop a quantum kinetic theory for Bloch electrons driven by a uniform dc electric field, extending the nonequilibrium density-matrix formalism beyond the non-crossing approxi…
Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas
James H. Cullen, Dimitrie Culcer
Increasing demand for computational power has initiated the hunt for energy efficient and stable memory devices. This is the overarching motivation behind the recent rise of \texti…
Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics
James H. Cullen, Zhanning Wang, Dimitrie Culcer
State-of-the-art magnetic devices rely on faster, more efficient memory elements. A major recent advance is the discovery of orbital torques, which use the orbital angular momentum…
Room-Temperature Disorder-Driven Nonlinear Transport in Topological Materials
Rhonald Burgos Atencia, Shanshan Liu, Kian Ping Loh +1
Recent experiments have reported nonlinear signals in topological materials up to room temperature. Here we show that this response stems from extrinsic spin-orbit contributions to…
Quantum geometry and quantum capacitance in the orbital magneto-electric effect
James H. Cullen, Daniel P. Arovas, Roberto Raimondi +1
The orbital magneto-electric effect (OME), the generation of a steady-state orbital angular momentum (OAM) density by an electric field, is a central component of orbitronics. Neve…
Anisotropic spin-blockade leakage current in a Ge hole double quantum dot
Zhanning Wang, S. D. Liles, Joe Hillier +2
Group IV quantum dot hole spin systems, exhibiting strong spin-orbit coupling, provide platforms for various qubit architectures. The rapid advancement of solid-state technologies…
Effect of disorder and strain on the operation of planar Ge hole spin qubits
Abhikbrata Sarkar, Pratik Chowdhury, Xuedong Hu +5
Germanium quantum dots in strained heterostructures exhibit fast and coherent hole qubit control in experiments. In this work, we theoretic…
Giant orbital Hall effect due to the bulk states of 3D topological insulators
James H. Cullen, Hong Liu, Dimitrie Culcer
The highly efficient torques generated by 3D topological insulators make them a favourable platform for faster and more efficient magnetic memory devices. Recently, research into h…
Transverse magnetic focusing in two-dimensional hole gases
Yik K. Lee, Jackson S. Smith, Hong Liu +4
Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with…
Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles +9
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. U…
Dephasing of planar Ge hole spin qubits due to 1/ charge noise
Zhanning Wang, Sina Gholizadeh, Xuedong Hu +2
Hole spin qubits in Ge, investigated for all-electrical spin manipulation because of its large spin-orbit coupling, are exposed to charge noise leading to decoherence. Here we cons…
Quantum correction to the orbital Hall effect
Hong Liu, James H. Cullen, Daniel P. Arovas +1
Evaluations of the orbital Hall effect (OHE) have only retained inter-band matrix elements of the position operator. Here we evaluate the OHE including all matrix elements of the p…
2024 roadmap on 2D topological insulators
Bent Weber, Michael S Fuhrer, Xian-Lei Sheng +22
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band struct…
Spin-Hall effect in topological materials: Evaluating the proper spin current in systems with arbitrary degeneracies
Hongyang Ma, James H. Cullen, Serajum Monir +2
The spin-Hall effect underpins some of the most active topics in modern physics, including spin torques and the inverse spin-Hall effect, yet it lacks a proper theoretical descript…
Electrically tunable, rapid spin-orbit torque induced modulation of colossal magnetoresistance in MnSiTe nanoflakes
Cheng Tan, Mingxun Deng, Yuanjun Yang +13
As a quasi-layered ferrimagnetic material, MnSiTe nanoflakes exhibit magnetoresistance behaviour that is fundamentally different from their bulk crystal counterparts. T…
Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect
Rhonald Burgos Atencia, Amit Agarwal, Dimitrie Culcer
The investigation of orbital angular momentum (OAM) of delocalised Bloch electrons has advanced our understanding of magnetic, transport, and optical phenomena in crystals, drawing…
Intrinsic torque on the orbital angular momentum in an electric field
Rhonald Burgos Atencia, Daniel P. Arovas, Dimitrie Culcer
Orbitronics harnesses non-equilibrium densities and flows of electrons orbital angular momentum (OAM). Although the OAM must be long lived to be useful in information processing, t…
A singlet-triplet hole-spin qubit in MOS silicon
S. D. Liles, D. J. Halverson, Z. Wang +14
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics…
Electrical operation of hole spin qubits in planar MOS silicon quantum dots
Zhanning Wang, Abhikbrata Sarkar, S. D. Liles +4
Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qu…
Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current
James H. Cullen, Dimitrie Culcer
The substantial amount of recent research into spin torques has been accompanied by a revival of interest in the spin-Hall effect. This effect contributes to the spin torque in man…
Disorder in the non-linear anomalous Hall effect of -symmetric Dirac fermions
Rhonald Burgos Atencia, Di Xiao, Dimitrie Culcer
The study of the non-linear anomalous Hall effect (NLAHE) in -symmetric systems has focussed on intrinsic mechanisms. Here we show that disorder contributes…
Dominance of extrinsic scattering mechanisms in the orbital Hall effect: graphene, transition metal dichalcogenides and topological antiferromagnets
Hong Liu, Dimitrie Culcer
The theory of the orbital Hall effect (OHE), a transverse flow of orbital angular momentum in response to an electric field, has concentrated overwhelmingly on intrinsic mechanisms…