activity
20052026
most citedRoom-temperature antiferromagnetic memory resistor

707 citations · 3.9k across the 61 of their papers we have counts for

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31 papers · 1 filter

cond-mat.mes-hall2024

3D ferroelectric phase field simulations of polycrystalline multi-phase hafnia and zirconia based ultra-thin films

Prabhat Kumar, Michael Hoffmann, Andrew Nonaka +2

HfO- and ZrO-based ferroelectric thin films have emerged as promising candidates for the gate oxides of next generation electronic devices. Recent work has experimentally d…

cond-mat.mes-hall2022

Topological Edge Conduction Induced by Strong Anisotropic Exchange Interactions

Shehrin Sayed, Pratik Brahma, Cheng-Hsiang Hsu +1

We predict that an interplay between isotropic and anisotropic exchange interactions in a honeycomb lattice structure can lead to topological edge conduction when the anisotropic i…

cond-mat.mes-hall2020★ 12 cited

Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials

Shehrin Sayed, Seokmin Hong, Xiaoxi Huang +5

Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons.…

cond-mat.mes-hall2020

Spin-orbit torque generated by amorphous FeSi

Cheng-Hsiang Hsu, Julie Karel, Niklas Roschewsky +5

While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the…

cond-mat.mes-hall2019★ 5 cited

Electric-Field Control of the Interlayer Exchange Coupling for Magnetization Switching

Shehrin Sayed, Cheng-Hsiang Hsu, Niklas Roschewsky +2

We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, whic…

cond-mat.mes-hall2018★ 88 cited

Spin-Orbit Torque and Nernst Effect in Bi-Sb/Co Heterostructures

Niklas Roschewsky, Emily S. Walker, Praveen Gowtham +4

Harmonic measurements of the longitudinal and transverse voltages in Bi-Sb/Co bilayers are presented. A large second harmonic voltage signal due to the ordinary Nernst effect is ob…

cond-mat.mes-hall2017★ 88 cited

Ferroelectric Negative Capacitance Domain Dynamics

Michael Hoffmann, Asif Islam Khan, Claudy Serrao +6

Transient negative capacitance effects in epitaxial ferroelectric Pb(ZrTi)O capacitors are investigated with a focus on the dynamical switching behavior governe…

cond-mat.mes-hall2017★ 43 cited

Differential voltage amplification from ferroelectric negative capacitance

Asif I. Khan, Michael Hoffmann, Korok Chatterjee +8

It is well known that one needs an external source of energy to provide voltage amplification. Because of this, conventional circuit elements such as resistors, inductors or capaci…

cond-mat.mes-hall2017★ 21 cited

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field Effect Transistors

Samuel Smith, Juan-Pablo Llinás, Jeffrey Bokor +1

Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbon…

cond-mat.mes-hall2017★ 109 cited

Thickness Dependence of Spin-Orbit Torques in Ferrimagnetic GdFeCo Alloys

Niklas Roschewsky, Charles-Henri Lambert, Sayeef Salahuddin

So far, studies of spin-orbit torques (SOT) in ferromagnets with perpendicular magnetic anisotropy (PMA) have been restricted to ultra thin samples, while a systematic study of its…

cond-mat.mes-hall2017★ 81 cited

Single shot ultrafast all optical magnetization switching of ferromagnetic Co/Pt multilayers

Jon Gorchon, Charles-Henri Lambert, Yang Yang +4

In a number of recent experiments, it has been shown that femtosecond laser pulses can control magnetization on picosecond timescales, which is at least an order of magnitude faste…

cond-mat.mes-hall2016★ 208 cited

Ultrafast Magnetization Reversal by Picosecond Electrical Pulses

Yang Yang, R. B. Wilson, Jon Gorchon +3

The field of spintronics involves the study of both spin and charge transport in solid state devices with a view toward increasing their functionality and efficiency. Alternatively…

cond-mat.mes-hall2016★ 44 cited

Electric Current Induced Ultrafast Demagnetization

R. B. Wilson, Yang Yang, Jon Gorchon +3

We report the magnetic response of Co/Pt multilayers to picosecond electrical heating. Using photoconductive Auston switches, we generate electrical pulses with 5.5 picosecond dura…

cond-mat.mes-hall2016★ 125 cited

Spin-Orbit Torques in ferrimagnetic GdFeCo Alloys

Niklas Roschewsky, Tomoya Matsumura, Suraj Cheema +4

The spin-orbit torque switching of ferrimagnetic Gd(FeCo) films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations.…

cond-mat.mes-hall2014

Negative Capacitance in a Ferroelectric Capacitor

Asif Islam Khan, Korok Chatterjee, Brian Wang +6

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacita…

cond-mat.mes-hall2013★ 121 cited

Non-volatile Spin Switch for Boolean and Non-Boolean Logic

Supriyo Datta, Sayeef Salahuddin, Behtash Behin-Aein

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integra…

cond-mat.mes-hall2012★ 28 cited

Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors

Youngki Yoon, Sayeef Salahuddin

We have studied quantum transport in Graphene Nanoribbon Tunnel Field-Effect Transistors. Unlike other studies on similar structures, we have included dissipative processes induced…

cond-mat.mes-hall2011★ 2 cited

Intrinsic Cut-off Frequency in Scaled Graphene Transistors

Kartik Ganapathi, Youngki Yoon, Sayeef Salahuddin

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device trans…

cond-mat.mes-hall2011★ 40 cited

Role of Phonon Scattering in Graphene Nanoribbon Transistors: Non-Equilibrium Green's Function Method with Real Space Approach

Youngki Yoon, Dmitri E. Nikonov, Sayeef Salahuddin

Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space…

cond-mat.mes-hall2011★ 342 cited

Experimental Evidence of Ferroelectric Negative Capacitance in Nanoscale Heterostructures

Asif Islam Khan, Debanjan Bhowmik, Pu Yu +4

We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric, Pb(Zr0.2Ti0.8)O3 a…

cond-mat.mes-hall2011★ 95 cited

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

Kartik Ganapathi, Sayeef Salahuddin

We propose a Heterojunction Vertical Tunneling FET and show using self-consistent ballistic quantum transport simulations that it can provide very steep subthreshold swings and hig…

cond-mat.mes-hall2010★ 36 cited

Barrier-Free Tunneling in a Carbon Heterojunction Transistor

Youngki Yoon, Sayeef Salahuddin

Recently it has been experimentally shown that a graphene nanoribbon (GNR) can be obtained by unzipping a carbon nanotube (CNT). This makes it possible to fabricate all-carbon hete…

cond-mat.mes-hall2010★ 87 cited

Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance

Kartik Ganapathi, Youngki Yoon, Sayeef Salahuddin

Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the…

cond-mat.mes-hall2009★ 1 cited

Voltage Asymmetry of Spin-Transfer Torques

Deepanjan Datta, Behtash Behin-Aein, Sayeef Salahuddin +1

We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential…