Naomi Pieczulewski

most citedGrowth of

α - G a_{2} O_{3}

A l_{2} O_{3}

by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

15 citations · 15 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $β$ -Ga $_{2}$ O $_{3}$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

cond-mat.mtrl-sci2023★ 15 cited

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

J. P. McCandless, D. Rowe, N. Pieczulewski +8

We report the growth of $α - G a_{2} O_{3}$ on $m$ -plane $A l_{2} O_{3}$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We…

Silicon Implantation and Annealing in β-Ga2​O3​: Role of Ambient, Temperature, and Time

Growth of α−Ga2​O3​ on Al2​O3​ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

Growth of $α - G a_{2} O_{3}$ on $A l_{2} O_{3}$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy