Growth of $\hat{I}\pm -G{a}_2{O}_3$ on $A{l}_2{O}_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Abstract

We report the growth of $\hat{I}\pm -G{a}_2{O}_3$ on $m$-plane $A{l}_2{O}_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $\hat{I}\pm -G{a}_2{O}_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $\hat{I}\pm -G{a}_2{O}_3$. Through the use of In-mediated catalysis, growth rates over $0.2\hat{I}¼\text{m}{\text{hr}}^{-1}$ and rocking curves with full width at half maxima of $\hat{I}”\ddot{I}‰\approx 0.45^{\circ }$ are achieved. Faceting is observed along the $\hat{I}\pm -G{a}_2{O}_3$ film surface and is explored through scanning transmission electron microscopy.