William A. Callahan

collaborators

3 papers

cond-mat.mtrl-sci2024

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

William A. Callahan, Kingsley Egbo, Cheng-Wei Lee +3

$β$ -Ga $_{2}$ O $_{3}$ -based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applicatio…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

physics.app-ph2023

Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$ -Ga $_{2}$ O $_{3}$ Devices

William A. Callahan, Edwin Supple, David Ginley +4

Beta gallium oxide ( $β$ -Ga $_{2}$ O $_{3}$ ) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization la…

Reliable operation of Cr2​O3​:Mg/ β-Ga2​O3​ p-n heterojunction diodes at 600∘C

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Ultrathin Stable Ohmic Contacts for High-Temperature Operation of β-Ga2​O3​ Devices

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $β$ -Ga $_{2}$ O $_{3}$ Devices