Ultrathin Stable Ohmic Contacts for High-Temperature Operation of $\beta$-Ga${}_2$O${}_3$ Devices

Abstract

Beta gallium oxide ($\beta$-Ga${}_2$O${}_3$) shows significant promise in the high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperature present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300-400${}^{\circ }$C) due to a combination of non-stoichiometric Ti/Ga${}_2$O${}_3$ interfacial reactions and kinetically favored Ti diffusion processes. Here we demonstrate stable Ohmic contacts for Ga${}_2$O${}_3$ devices operating up to 500-600${}^{\circ }$C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5nm Ti / 100nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 hours) at 600${}^{\circ }$C in vacuum ($\le$ 10${}^{-4}$ Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550${}^{\circ }$C in flowing N${}_2$. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift towards rectifying contacts and other interfacial layers.

25 Pages, 7 Figures