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cond-mat.mtrl-sci2009
Unified Model for P-N Junction Current-Voltage Characteristics
Miron J. Cristea
The current-voltage p-n junction characteristics were mainly analyzed until now at low injection levels and high level injection separately. This work unifies the low injection, me…
cond-mat.mtrl-sci2006
Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs
Miron J. Cristea
In this work, an analytical formula that gives the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and other devices with similar…
cond-mat.mtrl-sci2006★ 1 cited
The Shockley-type boundary conditions for semiconductor p-n junctions at medium and high injection levels
Miron J. Cristea
The classical Shockley boundary conditions are used for the determination of the minority carrier concentrations at the edges of the space-charge region of semiconductor p-n juncti…