First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions
arXiv:math-ph/0609004
Abstract
Based on semiconductor materials fundamental equations, the calculation of the depletion region width and barrier capacitance of practical diffused -Gaussian profile- semiconductor junctions was achieved for the first time in this work. The obtained formulas are valid for p-n junctions, Schottky junctions, hetero-junctions and other types of semiconductor junctions.
8 pages, 1 figure