activity
20222026
most citedGermanium wafers for strained quantum wells with low disorder

48 citations · 158 across the 12 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

9 papers · 1 filter

cond-mat.mes-hall2026

Superconducting edge contact to a buried Ge quantum well

Dina Sokolova, Davide Costa, Davide Degli Esposti +4

Semiconductor-superconductor hybrid systems form the basis for a broad range of quantum phenomena, such as Andreev bound states, topological superconductivity, and hybrid quantum H…

cond-mat.mes-hall2026

Confinement drives valley splitting above 4K in buried silicon quantum wells

Davide Degli Esposti, Emma Catherine Brann, Asser Elsayed +3

Controlling the energy scales of a quantum system is essential for defining robust qubits. In silicon spin qubits, the nearly degenerate conduction-band valleys create a leakage ch…

cond-mat.mes-hall2026

Weight-four parity checks with silicon spin qubits

Brennan Undseth, Nicola Meggiato, Yi-Hsien Wu +7

Recent advances in coherent spin shuttling have made sparse semiconductor spin qubit arrays an appealing solid-state platform to realize quantum processors. The dynamic and long-ra…

cond-mat.mes-hall2025

Using Landau quantization to probe disorder in semiconductor heterostructures

Asser Elsayed, Davide Costa, Lucas E. A. Stehouwer +5

Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays.…

cond-mat.mes-hall2025

Quantum oscillations in two-dimensional hole gases with competing cyclotron and Zeeman energy

Davide Costa, Lucas E. A. Stehouwer, Davide Degli Esposti +1

Evaluation of critical bandstructure and quantum transport parameters in two-dimensional systems is challenging when competition emerges among different energy scales shaping quant…

cond-mat.mes-hall2023★ 40 cited

Low disorder and high valley splitting in silicon

Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül +13

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the…

cond-mat.mes-hall2023★ 48 cited

Germanium wafers for strained quantum wells with low disorder

Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti +4

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-…

cond-mat.mes-hall2023★ 39 cited

Hotter is easier: unexpected temperature dependence of spin qubit frequencies

Brennan Undseth, Oriol Pietx-Casas, Eline Raymenants +13

As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum al…

cond-mat.mes-hall2022★ 23 cited

Wafer-scale low-disorder 2DEG in Si/SiGe without an epitaxial Si cap

Davide Degli Esposti, Brian Paquelet Wuetz, Viviana Fezzi +3

We grow Si/SiGe heterostructures by reduced-pressure chemical vapor deposition and terminate the stack without an epitaxial Si cap but with an amorphous Si-rich layer obtain…