Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques

Albert Lu, Junipero Verbeke, Phil Oldiges +2

In this work, 3D full-domain 3 nm gate-all-around field-effect transistor (GAA-FET) static random access memories (SRAMs) with various substrate isolation techniques are simulated…