24 citations · 24 across the 3 of their papers we have counts for
3 papers
cs.ET2026
Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques
Albert Lu, Junipero Verbeke, Phil Oldiges +2
In this work, 3D full-domain 3 nm gate-all-around field-effect transistor (GAA-FET) static random access memories (SRAMs) with various substrate isolation techniques are simulated…
cond-mat.mtrl-sci2022
FinFET and Nanowire SRAM Radiation Hardness Studies using Ab initio-TCAD Simulation Framework
Johan Saltin, Adam Elwailly, Hiu Yung Wong
In this paper, we study the vulnerability of 5nm node FinFET and nanowire (20nm gate length) and their corresponding SRAM under radiation. Ab initio tools, SRIM, PHITS, and GEANT4,…
physics.comp-ph2021★ 24 cited
TCAD Modeling of Cryogenic nMOSFET ON-State Current and Subthreshold Slope
Prabjot Dhillon, Nguyen Cong Dao, Hiu Yung Wong
In this paper, through careful calibration, we demonstrate the possibility of using a single set of models and parameters to model the ON current and Sub-threshold Slope (SS) of an…