3 papers
cs.AR2022
CoPA: Cold Page Awakening to Overcome Retention Failures in STT-MRAM Based I/O Buffers
Mostafa Hadizadeh, Elham Cheshmikhani, Maysam Rahmanpour +2
Performance and reliability are two prominent factors in the design of data storage systems. To achieve higher performance, recently storage system designers use DRAM-based buffers…
cs.AR2022
TA-LRW: A Replacement Policy for Error Rate Reduction in STT-MRAM Caches
Elham Cheshmikhani, Hamed Farbeh, Seyed Ghassem Miremadi +1
As technology process node scales down, on-chip SRAM caches lose their efficiency because of their low scalability, high leakage power, and increasing rate of soft errors. Among em…
cs.AR2022
A System-Level Framework for Analytical and Empirical Reliability Exploration of STT-MRAM Caches
Elham Cheshmikhani, Hamed Farbeh, Hossein Asadi
Spin-Transfer Torque Magnetic RAM (STT-MRAM) is known as the most promising replacement for SRAM technology in large Last-Level Caches (LLCs). Despite its high-density, non-volatil…