22 citations · 66 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2021★ 7 cited
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
cond-mat.mtrl-sci2017★ 17 cited
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…
cond-mat.mtrl-sci2010★ 22 cited
The importance of intra-molecular electron spin relaxation in small molecular semiconductors
L. Schulz, M. Willis, L. Nuccio +14
Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectros…