22 citations · 66 across the 6 of their papers we have counts for
6 papers
Universal method to extract the average electron spin relaxation in organic semiconductors from muonium ALC resonances
Licheng Zhang, J. S. Lord, A. J. Drew
Muon spin spectroscopy and in particular the avoid level crossing (ALC) technique is a sensitive probe of electron spin relaxation (eSR) in organic semiconductors. In complex ALC s…
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…
The new high field photoexcitation muon spectrometer at the ISIS pulsed neutron and muon source
K. Yokoyama, J. S. Lord, P. Murahari +9
A high power pulsed laser system has been installed on the high magnetic field muon spectrometer (HiFi) at the ISIS pulsed neutron and muon source, situated at the STFC Rutherford…
Electron spin relaxation in organic semiconductors probed through muSR
Laura Nuccio, Leander Schulz, Maureen Willis +5
Muon spin spectroscopy and in particular the avoided level crossing technique is introduced, with the aim of showing it as a very sensitive local probe for electron spin relaxation…
The importance of intra-molecular electron spin relaxation in small molecular semiconductors
L. Schulz, M. Willis, L. Nuccio +14
Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectros…