22 citations · 64 across the 6 of their papers we have counts for
4 papers · 1 filter
Muonium as a probe of point defects in type-Ib diamond
K. Yokoyama, J. S. Lord, H. Abe +1
Muonium (Mu), a bound state of a positively charged muon and an electron, can diffuse through crystal lattices and interact with defect centers in insulators and semiconductors. We…
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…
The importance of intra-molecular electron spin relaxation in small molecular semiconductors
L. Schulz, M. Willis, L. Nuccio +14
Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectros…