22 citations · 64 across the 6 of their papers we have counts for
7 papers
First operation of the FAMU experiment at the RIKEN-RAL high intensity muon beam facility
FAMU Collaboration, A. Adamczak, D. Bakalov +40
The FAMU experiment, supported and funded by the Italian Institute of Nuclear Physics (INFN) and by the Science and Technology Facilities Council (STFC), aims to perform the first…
Muonium as a probe of point defects in type-Ib diamond
K. Yokoyama, J. S. Lord, H. Abe +1
Muonium (Mu), a bound state of a positively charged muon and an electron, can diffuse through crystal lattices and interact with defect centers in insulators and semiconductors. We…
The muon beam monitor for the FAMU experiment: design, simulation, test and operation
R. Rossini, G. Baldazzi, S. Banfi +35
FAMU is an INFN-led muonic atom physics experiment based at the RIKEN-RAL muon facility at the ISIS Neutron and Muon Source (United Kingdom). The aim of FAMU is to measure the hype…
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…
The new high field photoexcitation muon spectrometer at the ISIS pulsed neutron and muon source
K. Yokoyama, J. S. Lord, P. Murahari +9
A high power pulsed laser system has been installed on the high magnetic field muon spectrometer (HiFi) at the ISIS pulsed neutron and muon source, situated at the STFC Rutherford…
The importance of intra-molecular electron spin relaxation in small molecular semiconductors
L. Schulz, M. Willis, L. Nuccio +14
Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectros…