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physics.chem-ph2023
Plasma processes affecting etching and growth of nitride materials
Yuri Barsukov
The main goal of this research was to determine the key reagents during the highly Si3N4/SiO2 selective etching. The experiments were conducted, where both Si3N4 and SiO2 samples w…
physics.chem-ph2023★ 1 cited
Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study
Omesh Dhar Dwivedi, Yuri Barsukov, Sierra Jubin +2
Anisotropic etching is a widely used process in semiconductor manufacturing, in particular for micro- and nano-scale texturing of silicon surfaces for black silicon production. The…