11 citations · 18 across the 5 of their papers we have counts for
5 papers
Mechanisms of inductively coupled BCl3-plasma interaction with the GaN surfaceMechanisms of inductively coupled BCl3-plasma interaction with the GaN surface
Anton Kobelev, Nikolay Andrianov, Yuri Barsukov +1
Consideration is given to inductively coupled BCl3-plasma (ICP) treatment of the GaN surface, which is a promising technique to get the low resistance ohmic contacts in GaN-based t…
Boron adatom adsorption on graphene: A case study in computational chemistry methods for surface interactions
S. Jubin, A. Rau, Y. Barsukov +2
Though weak surface interactions and adsorption can play an important role in plasma processing and materials science, they are not necessarily simple to model. A boron adatom adso…
Plasma processes affecting etching and growth of nitride materials
Yuri Barsukov
The main goal of this research was to determine the key reagents during the highly Si3N4/SiO2 selective etching. The experiments were conducted, where both Si3N4 and SiO2 samples w…
Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study
Omesh Dhar Dwivedi, Yuri Barsukov, Sierra Jubin +2
Anisotropic etching is a widely used process in semiconductor manufacturing, in particular for micro- and nano-scale texturing of silicon surfaces for black silicon production. The…
Boron nitride nanotube precursor formation during high-temperature synthesis: kinetic and thermodynamic modelling
Yuri Barsukov, Omesh Dwivedi, Igor Kaganovich +3
We performed integrated modelling of the chemical pathways of formation for boron nitride nanotube (BNNT) precursors during high-temperature synthesis in a B/N2 mixture. Modelling…