F. Alema

activity

20212025

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations · 193 across the 7 of their papers we have counts for

collaborators

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3 papers · 1 filter

physics.app-ph2023

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $β$ -Ga $_{2}$ O $_{3}$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…

physics.app-ph2022★ 68 cited

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Arkka Bhattacharyya, Shivam Sharma, Fikadu Alema +7

Field-plated (FP) depletion-mode MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN $_{x}$ dielectric…

physics.app-ph2021★ 90 cited

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$

Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy +5

We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$ -Ga $_{2}$ O $_{3}$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOV…

Monocrystalline Si/β-Ga2​O3​ p-n heterojunction diodes fabricated via grafting

4.4 kV β-Ga2​O3​ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm2

Multi-kV class β-Ga2​O3​ MESFETs with a Lateral Figure of Merit up to 355 MW/cm2

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

4.4 kV $β$ -Ga $_{2}$ O $_{3}$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm $^{2}$

Multi-kV class $β$ -Ga $_{2}$ O $_{3}$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm $^{2}$