33 citations · 55 across the 2 of their papers we have counts for
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physics.app-ph2023★ 22 cited
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation
R. Fontanini, M. Segatto, K. S. Nair +7
In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF…
physics.app-ph2021★ 33 cited
CMOS back-end-of-line compatible ferroelectric tunnel junction devices
Veeresh Deshpande, Keerthana Shajil Nair, Marco Holzer +2
Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices w…