128 citations · 293 across the 13 of their papers we have counts for
13 papers
Flux dependent 1.5 MeV self-ion beam induced sputtering from Gold nanostructured thin films
J. Ghatak, B. Sundaravel, K. G. M. Nair +1
We discuss four important aspects of 1.5 MeV Au2+ ion-induced flux dependent sputtering from gold nanostrcutures (of an average size 7.6 nm and height 6.9 nm) that are deposited on…
Ion beam induced enhanced diffusion from gold thin films in silicon
J. Ghatak, B. Sundaravel, K. G. M. Nair +1
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by i…
Flux dependent MeV self-ion- induced effects on Au nanostructures: Dramatic mass transport and nano-silicide formation
J. Ghatak, M. Umananda Bhatta, B. Sundaravel +5
We report a direct observation of dramatic mass transport due to 1.5 MeV Au2+ ion impact on isolated Au nanostructures of an average size 7.6 nm and a height 6.9 nm that are deposi…
Multi-phonon Raman scattering in GaN nanowires
S. Dhara, Sharat Chandra, G. Mangamma +9
UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic…
Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +8
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…
Ferromagnetism in cobalt doped n-GaN
S. Dhara, B. Sundaravel, K. G. M. Nair +5
Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 a…