95 citations · 222 across the 9 of their papers we have counts for
9 papers
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
Shijie Xu, Yan Huang, Farzad Mahfouzi +15
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…
Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction
Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi +14
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the exte…
Skyrmions in magnetic tunnel junctions
Xueying Zhang, Wenlong Cai, Xichao Zhang +10
In this work, we demonstrate that skyrmions can be nucleated in the free layer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriya interactions (DMI) by a spin-polarized…
Ultra-Fast Ferrimagnetic All Spin Logic Device
Yue Zhang, Zhizhong Zhang, Zhenyi Zheng +7
All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic in…
Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy
Yu Zhang, Xueying Zhang, Nicolas Vernier +8
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switchi…
Direct observation of domain wall surface tension by deflating or inflating a magnetic bubble
Xueying Zhang, Nicolas Vernier, Weisheng Zhao +3
The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena h…
A gate-variable spin current demultiplexer based on graphene
Li Su, Xiaoyang Lin, Youguang Zhang +5
Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…
Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System
Yue Zhang, Chao Zhang, Jiang Nan +6
Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory i…
Current-limiting challenges for all-spin logic devices
Li Su, Youguang Zhang, Jacques-Olivier Klein +4
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memor…