1 citations · 1 across the 1 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2022★ 1 cited
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…
cond-mat.mtrl-sci2020
Temperature Dependent Current Dispersion Study in -GaO FETs Using Sub-Microsecond Pulsed IV Characteristics
Abhishek Vaidya, Uttam Singisetti
A comprehensive study of drain current dispersion effects in -GaO FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain acc…
physics.app-ph2018
Pt, Ni and Ti Schottky barrier contacts to \{beta}-(Al0.19Ga0.81)2O3 grown by Molecular Beam Epitaxy on Sn doped \{beta}-Ga2O3 substrate
Abhishek Vaidya, K. Sasaki, A. Kuramata +2
A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 g…