Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…