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physics.app-ph2018

Pt, Ni and Ti Schottky barrier contacts to \{beta}-(Al0.19Ga0.81)2O3 grown by Molecular Beam Epitaxy on Sn doped \{beta}-Ga2O3 substrate

Abhishek Vaidya, K. Sasaki, A. Kuramata +2

A comprehensive current-voltage (I-V) characterization is performed for three different Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID) \{beta}-(Al0.19Ga0.81)2O3 g…