25 citations · 67 across the 5 of their papers we have counts for
5 papers
beta-Ga2O3 Double Gate Junctionless FET with an Efficient Volume Depletion Region
Dariush Madadi, Ali Asghar Orouji
This paper presents a new \b{eta}-Ga2O3 junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (\b{eta}DG-JL-FET) that a P+ packet embedded in the oxide layer (…
New Symmetric and Planar Designs of Reversible Full-Adders/Subtractors in Quantum-Dot Cellular Automata
Moein Sarvaghad-Moghaddam, Ali A. Orouji
Quantum-dot Cellular Automata (QCA) is one of the emerging nanotechnologies, promising alternative to CMOS technology due to faster speed, smaller size, lower power consumption, hi…
Reversible Gates in Emerging Quantum-dot Cellular Automata Technology: An Innovative Approach to Design and Simulation
Moein Sarvaghad-Moghaddam, Ali A. Orouji, Zeinab Ramezani +2
Power dissipation is known as the most notable limiting factor in all nano-electronic design techniques including Quantum-dot Cellular Automata (QCA). The familiar reversible compu…
A multi-objective synthesis methodology for majority/minority logic networks
Moein Sarvaghad-Moghaddam, Ali A. Orouji, Monireh Houshmand
New technologies such as Quantum-dot Cellular Automata (QCA), Single Electron Tunneling (SET), Tunneling Phase Logic (TPL) and all-spin logic (ASL) devices have been widely advocat…
Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects
Ali A. Orouji, M. Jagadesh Kumar
Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that t…