beta-Ga2O3 Double Gate Junctionless FET with an Efficient Volume Depletion Region

Dariush Madadi, Ali Asghar Orouji

This paper presents a new \b{eta}-Ga2O3 junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (\b{eta}DG-JL-FET) that a P+ packet embedded in the oxide layer (…