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20102021
most citedbeta-Ga2O3 Double Gate Junctionless FET with an Efficient Volume Depletion Region

25 citations · 67 across the 5 of their papers we have counts for

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cond-mat.mes-hall2010★ 24 cited

Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects

Ali A. Orouji, M. Jagadesh Kumar

Design considerations for a below 100 nm channel length SOI MOSFET with electrically induced shallow source/drain junctions are presented. Our simulation results demonstrate that t…