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Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers
Lidia C. Gomes, P. E. Trevisanutto, A. Carvalho +2
The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundament…
Vacancies and oxidation of 2D group-IV monochalcogenides
Lídia C. Gomes, A. Carvalho, A. H. Castro Neto
Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configuration…
Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides
Lídia C. Gomes, A. Carvalho, A. H. Castro Neto
We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric te…
Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures
Daichi Kozawa, Alexandra Carvalho, Ivan Verzhbitskiy +6
Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-…
Valleytronics in Tin (II) Sulfide
A. S. Rodin, L. C. Gomes, A. Carvalho +1
Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation a…
Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
Ahmet Avsar, Ivan J. Vera-Marun, Tan Jun You +4
The presence of finite bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electro…
Spin-Orbit Proximity Effect in Graphene
Ahmet Avsar, Jun You Tan, Jayakumar Balakrishnan +9
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptional…
Electronic transport in graphene-based heterostructures
J. Y. Tan, A. Avsar, J. Balakrishnan +8
While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (…
Scattering theory of spin-orbit active adatoms on graphene
Alexandre Pachoud, Aires Ferreira, B. Özyilmaz +1
The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is th…
Electric field effect in ultrathin black phosphorus
Steven P. Koenig, Rostislav A. Doganov, Hennrik Schmidt +2
Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus fiel…
Transport properties of monolayer MoS grown by chemical vapour deposition
Hennrik Schmidt, Shunfeng Wang, Leiqiang Chu +8
Recent success in the growth of monolayer MoS via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic an…
Donor and Acceptor Levels in Semiconducting Transition Metal Dichalcogenides
A. Carvalho, A. H. Castro Neto
Density functional theory calculations are used to show that it is possible to dope semiconducting transition metal dichalcogenides (TMD) such as MoS and WS with electrons…
Optical conductivity study of screening of many-body effects in graphene interfaces
Pranjal Kumar Gogoi, Iman Santoso, Surajit Saha +5
Theoretical studies have shown that electron-electron (e-e) and electron-hole (e-h) interactions play important roles in many observed quantum properties of graphene making this an…