M. Frentrup

activity

20202026

collaborators

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physics.app-ph2024★ 15 cited

Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon

Saptarsi Ghosh, Martin Frentrup, Alexander M. Hinz +5

Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and latti…

physics.app-ph2020

Ti alloyed $α$ -Ga $_{2}$ O $_{3}$ : route towards wide band gap engineering

A. Barthel, J. W. Roberts, M. Napari +6

The suitability of Ti as a band gap modifier for $α$ -Ga $_{2}$ O $_{3}$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti $_{2}$ O $_{3}$ a…

Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon

Ti alloyed α-Ga2​O3​: route towards wide band gap engineering

Ti alloyed $α$ -Ga $_{2}$ O $_{3}$ : route towards wide band gap engineering