29 citations · 48 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2026
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin
Martin Frentrup, Indraneel Sanyal, Dan Lamb +5
Thick, defect free epitaxial layers grown using industry standard techniques are a fundamental requirement for the widespread adoption of fully vertical power devices based on ultr…
cond-mat.mtrl-sci2025★ 4 cited
A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
Ben Thornley, Maruf Sarkar, Saptarsi Ghosh +4
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (N…