29 citations · 48 across the 4 of their papers we have counts for
4 papers
Why Do Thick MOCVD-Grown beta-Ga2O3 Epilayers on (001) Substrates Crack: Crystallographic Origin
Martin Frentrup, Indraneel Sanyal, Dan Lamb +5
Thick, defect free epitaxial layers grown using industry standard techniques are a fundamental requirement for the widespread adoption of fully vertical power devices based on ultr…
A cascade model for the defect-driven etching of porous GaN distributed Bragg reflectors
Ben Thornley, Maruf Sarkar, Saptarsi Ghosh +4
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (N…
Buffer-less Gallium Nitride High Electron Mobility Heterostructures on Silicon
Saptarsi Ghosh, Martin Frentrup, Alexander M. Hinz +5
Thick metamorphic buffers are perceived to be indispensable for the heteroepitaxial integration of III-V semiconductors on silicon substrates with large thermal expansion and latti…
Ti alloyed -GaO: route towards wide band gap engineering
A. Barthel, J. W. Roberts, M. Napari +6
The suitability of Ti as a band gap modifier for -GaO was investigated, taking advantage of the isostructural α-phases and high band gap difference between TiO a…