34 citations · 102 across the 5 of their papers we have counts for
3 papers
cond-mat.mes-hall2026
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
cond-mat.mes-hall2026
Composite based magnetoelectric scaled devices with large output voltages
Emma Van Meirvenne, Aude Brinkmann-Hornbogen, Bart Soree +2
In this work, we investigate the differential voltage generation arising from the direct magnetoelectric (ME) effect in nanoscale composite devices upon magnetization rotation from…
cond-mat.mtrl-sci2020★ 34 cited
Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions
T. Devolder, O. Bultynck, P. Bouquin +7
We analyse the phenomenon of back-hopping in spin-torque induced switching of the magnetization in perpendicularly magnetized tunnel junctions. The analysis is based on single-shot…