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cond-mat.mes-hall2026
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
cond-mat.mes-hall2026
Composite based magnetoelectric scaled devices with large output voltages
Emma Van Meirvenne, Aude Brinkmann-Hornbogen, Bart Soree +2
In this work, we investigate the differential voltage generation arising from the direct magnetoelectric (ME) effect in nanoscale composite devices upon magnetization rotation from…