activity
20162022
most citedFocused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes

32 citations · 103 across the 7 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2022★ 5 cited

4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy

Ettore Vittone, Paolo Olivero, Milko Jaksic +1

We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency…

cond-mat.mtrl-sci2022

Increased Phase Coherence Length in a Porous Topological Insulator

Alex Nguyen, Golrokh Akhgar, David L. Cortie +11

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as…

cond-mat.mtrl-sci2020

Fluorine-based color centers in diamond

S. Ditalia Tchernij, T. Lühmann, E. Corte +14

We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room…

cond-mat.mes-hall2016★ 22 cited

Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation

F. Picollo, P. Olivero, F. Bellotti +6

As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are…

cond-mat.mtrl-sci2016★ 30 cited

Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy

E. Vittone, Z. Pastuovic, P. Olivero +5

The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic p…

physics.ins-det2016★ 6 cited

Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode

P. Olivero, J. Forneris, P. Gamarra +6

The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge co…