activity
20152025
most citedLayered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

93 citations · 184 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2025★ 1 cited

Interface, bulk and surface structure of heteroepitaxial altermagnetic α-MnTe films grown on GaAs(111)

Sara Bey, Maksym Zhukovskyi, Tatyana Orlova +7

Epitaxial MnTe films have recently seen a spur of research into their altermagnetic semiconducting properties. However, those properties may be extremely sensitive to structural an…

cond-mat.mtrl-sci2024★ 2 cited

Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

Sara Bey, Shelby S. Fields, Nicholas G. Combs +10

The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and stron…

cond-mat.mes-hall2024

Probing Berry curvature in magnetic topological insulators through resonant infrared magnetic circular dichroism

Seul-Ki Bac, Florian le Mardelé, Jiashu Wang +16

Probing the quantum geometry and topology in condensed matter systems has relied heavily on static electronic transport experiments in magnetic fields. Yet, contact-free optical me…

cond-mat.mtrl-sci2023

MBE growth of axion insulator candidate EuIn2As2

Muhsin Abdul Karim, Jiashu Wang, David Graf +6

The synthesis of thin films of magnetic topological materials is necessary to achieve novel quantized Hall effects and electrodynamic responses. EuIn2As2 is a recently predicted to…

cond-mat.mes-hall2022★ 3 cited

Discovery of a high-temperature antiferromagnetic state and transport signatures of exchange interactions in a Bi2Se3/EuSe heterostructure

Ying Wang, Valeria Lauter, Olga Maximova +10

Spatial confinement of electronic topological surface states (TSS) in topological insulators poses a formidable challenge because TSS are protected by time-reversal symmetry. In pr…

cond-mat.mes-hall2022

Energy gap of topological surface states in proximity to a magnetic insulator

Jiashu Wang, Tianyi Wang, Mykhaylo Ozerov +14

Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topologic…

cond-mat.supr-con2021★ 24 cited

Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films

Jiashu Wang, William Powers, Zhan Zhang +10

Topological superconductors have attracted tremendous excitement as they are predicted to host Majorana zero modes that can be utilized for topological quantum computing. Candidate…

cond-mat.mes-hall2021★ 3 cited

Fermi level tuning and band alignment in Mn doped InAs/GaSb

Logan Riney, Joaquin Bermejo-Ortiz, Gauthier Krizman +10

InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted t…

cond-mat.mtrl-sci2021★ 4 cited

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Ying Wang, Xinyu Liu, Seul-Ki Bac +6

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show…

cond-mat.mes-hall2021★ 43 cited

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

S. -K. Bac, K. Koller, F. Lux +15

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In thi…

cond-mat.mes-hall2020★ 11 cited

Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells

Jiashu Wang, X. Liu, C. Bunker +9

We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than th…

cond-mat.mtrl-sci2015★ 93 cited

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Priti Gupta, A. A. Rahman, Shruti Subramanian +10

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that…