Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Abstract

Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases.

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• Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4
• Magnetic field-controlled lattice thermal conductivity in MnBi2Te4
• Ubiquitous order-disorder transition in the Mn antisite sublattice of the (MnBi${}_2$Te${}_4$)(Bi${}_2$Te${}_3$)${}_n$ magnetic topological insulators
• Coexistence of Superconductivity and Antiferromagnetism in Topological Magnet MnBi2Te4 Films
• Spin-chirality-driven second-harmonic generation in two-dimensional magnet CrSBr
• Origin of the exotic electronic states in antiferromagnetic NdSb
• Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi${}_2$Te${}_4$
• Fermi level dependence of magnetism and magnetotransport in the magnetic topological insulators Bi${}_2$Te${}_3$ and BiSbTe${}_3$ containing self-organized MnBi${}_2$Te${}_4$ septuple layers
• Hall-effect in the MnBi_2Te_4 crystal using silicon nitride nanomembrane via contacts
• Phase equilibria in MnSb2Te4-GeSb2Te4 system and magnetic properties of Mn1-xGexSb2Te4 solid solutions