Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi2Te4

Abstract

In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi2Te4 thin films with electron doping. In particular, we show that the non-zero hysteresis loops in the anomalous Hall and magnetic circular dichroism measurements for even-SLs MnBi2Te4 films are originated from two different anti-ferromagnetic (AFM) states with opposite magnetoelectric coefficients that give rise to different energies of zeroth Landau levels of the surface states in this model. The complex form of the anomalous Hall hysteresis loop in even-SLs MnBi2Te4 films can be understood from two magnetic transitions, a transition from one AFM state to the other AFM state followed by a second transition to the ferromagnetic state. Our model also provides a microscopic understanding of the electrical switching between two AFM states via the axion electrodynamics in even-SL MnBi2Te4 films. We further study orbital magnetization and magnetoelectric coefficient in MnBi2Te4 films, and find an even-odd oscillation behavior of the magnetoelectric coefficient.

References in corpus (17)

• Topological Field Theory of Time-Reversal Invariant Insulators
• Intrinsic vs. extrinsic anomalous Hall effect in ferromagnets
• Higher-order Topology of Axion Insulator EuIn${}_2$As${}_2$
• Crystal growth and magnetic structure of MnBi2Te4
• Layer Hall effect in a 2D topological Axion antiferromagnet
• Axion Electrodynamics in Topological Materials
• Tailoring tricolor structure of magnetic topological insulator for robust axion insulator
• Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4
• Dichroic f-sum rule and the orbital magnetization of crystals
• Artificial Multiferroics and Enhanced Magnetoelectric Effect in van der Waals Heterostructures
• Robust A-type order and spin-flop transition on the surface of the antiferromagnetic topological insulator MnBi${}_2$Te${}_4$
• Coexistence of Surface Ferromagnetism and Gapless Topological State in MnBi${}_2$Te${}_4$
• Magnetic and transport properties in magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)
• Magnetic imaging of antiferromagnetic domain walls
• Axion optical induction of antiferromagnetic order
• Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
• Critical Behavior and Universal Signature of an Axion Insulator State

Cited by in corpus (8)

• Chern Number Tunable Quantum Anomalous Hall Effect in Compensated Antiferromagnets
• Engineering second-order topological insulators via coupling two first-order topological insulators
• Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi${}_2$Te${}_4$
• Interlayer Coupling Induced Topological Phase Transition to Higher Order
• Distinguishing Surface and Bulk Electromagnetism via Their Dynamics in an Intrinsic Magnetic Topological Insulator
• Chiral edge plasmons in quantum anomalous Hall insulators
• Quantum anomalous Hall effect with tunable Chern numbers induced by d-wave sublattice-staggered altermagnetism
• Orbital Longitudinal Magneto-electric Coupling in Multilayer Graphene