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20092020
most citedField Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

212 citations · 351 across the 5 of their papers we have counts for

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cond-mat.mes-hall2020★ 3 cited

Gated two-dimensional electron gas in magnetic field: nonlinear versus linear regimes

N. Dyakonova, M. Dyakonov, Z. D. Kvon

We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approach…

cond-mat.mes-hall2018★ 20 cited

Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

A. Kadykov, F. Teppe, C. Consejo +12

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transi…

cond-mat.mes-hall2014★ 44 cited

High intensity study of THz detectors based on field effect transistors

Dmytro B. But, Christoph Drexler, Mykola V. Sakhno +6

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was s…

cond-mat.mes-hall2012★ 72 cited

Helicity sensitive terahertz radiation detection by field effect transistors

Christoph Drexler, Nina Dyakonova, Peter Olbrich +10

Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of…

cond-mat.mes-hall2009★ 212 cited

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

W. Knap, M. Dyakonov, D. Coquillat +11

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear…