138 citations · 232 across the 6 of their papers we have counts for
7 papers
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert +7
We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine…
Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Manuel Meyer, Tobias Fähndrich, Sebastian Schmid +12
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitatio…
A topological field-effect memristor
Manuel Meyer, Selena Barragan, Sergey Krishtopenko +13
Overcoming the limitations of the von Neumann architecture requires new computational paradigms capable of solving complex problems efficiently. Quantum and neuromorphic computing…
Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
Manuel Meyer, Jonas Baumbach, Sergey Krishtopenko +13
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional…
Harnessing near-field thermal photons with efficient photovoltaic conversion
C Lucchesi, D. Cakiroglu, J. -P Perez +4
A huge amount of thermal energy is available close to material surfaces in radiative and non-radiative states, which can be useful for matter characterization or for energy devices…
Massless Dirac fermions in III-V semiconductor quantum wells
S. S. Krishtopenko, W. Desrat, K. E. Spirin +12
We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quan…
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…