23 citations · 69 across the 4 of their papers we have counts for
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The effect of isovalent doping on the electronic band structure of group IV semiconductors
Maciej P Polak, Paweł Scharoch, Robert Kudrawiec
The band gap engineering of group IV semiconductors has not been well explored theoretically and experimentally, except for SiGe. Recently, GeSn has attracted much attention due to…
Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets
Maciej P. Polak, Ryan Jacobs, Arun Mannodi-Kanakkithodi +2
Quantifying charge-state transition energy levels of impurities in semiconductors is critical to understanding and engineering their optoelectronic properties for applications rang…
MAST-SEY: MAterial Simulation Toolkit for Secondary Electron Yield. A monte carlo approach to secondary electron emission based on complex dielectric functions
Maciej P. Polak, Dane Morgan
MAST-SEY is an open-source Monte Carlo code capable of calculating secondary electron emission using input data generated entirely from first principle (density functional theory)…
Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang +19
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate…