2.6k citations · 3.9k across the 12 of their papers we have counts for
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Nonlinear Hall effect with non-centrosymmetric topological phase in ZrTe
Naizhou Wang, Jing-Yang You, Aifeng Wang +9
The non-centrosymmetric topological material has attracted intense attention due to its superior characters as compared to the centrosymmetric one. On one side, the topological pha…
Layer Hall effect in a 2D topological Axion antiferromagnet
Anyuan Gao, Yu-Fei Liu, Chaowei Hu +33
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At…
Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
Anyuan Gao, Jiawei Lai, Yaojia Wang +13
Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, lo…
Gate-tunable Room-temperature Ferromagnetism in Two-dimensional FeGeTe
Yujun Deng, Yijun Yu, Yichen Song +7
Material research has been a major driving force in the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the develop…
Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
Zuocheng Zhang, Likai Li, Jason Horng +10
Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material.…