337 citations · 569 across the 3 of their papers we have counts for
6 papers
Nonlinear Hall effect with non-centrosymmetric topological phase in ZrTe
Naizhou Wang, Jing-Yang You, Aifeng Wang +9
The non-centrosymmetric topological material has attracted intense attention due to its superior characters as compared to the centrosymmetric one. On one side, the topological pha…
Layer Hall effect in a 2D topological Axion antiferromagnet
Anyuan Gao, Yu-Fei Liu, Chaowei Hu +33
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At…
Observation of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures
Anyuan Gao, Jiawei Lai, Yaojia Wang +13
Initiating impact ionization of avalanche breakdown essentially requires applying a high electric field in a long active region, hampering carrier-multiplication with high gain, lo…
Proximity-Induced Superconductivity with Subgap Anomaly in Type II Weyl Semi-Metal WTe2
Qiao Li, Chaocheng He, Yaojia Wang +16
Due to the non-trivial topological band structure in type-II Weyl semimetal Tungsten ditelluride (WTe2), unconventional properties may emerge in its superconducting phase. While re…
Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
Fangyuan Yang, Zuocheng Zhang, Nai Zhou Wang +8
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the g…
Gate-tunable Room-temperature Ferromagnetism in Two-dimensional FeGeTe
Yujun Deng, Yijun Yu, Yichen Song +7
Material research has been a major driving force in the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the develop…